Silicon cantilevers locally heated from 300 K up to the melting point: Temperature profile measurement from their resonances frequency shift

@inproceedings{Pottier2021SiliconCL,
  title={Silicon cantilevers locally heated from 300 K up to the melting point: Temperature profile measurement from their resonances frequency shift},
  author={Basile Pottier and Felipe Aguilar Sandoval and Mickael Geitner and Francisco Esteban Melo and Ludovic Bellon},
  year={2021}
}
temperature profile measurement from their resonances frequency shift Basile Pottier,1 Felipe Aguilar Sandoval,2 Mickaël Geitner,1 Francisco Esteban Melo,3 and Ludovic Bellon1, a) Univ Lyon, Ens de Lyon, Univ Claude Bernard Lyon 1, CNRS, Laboratoire de Physique, F-69342 Lyon, France Departamento de Ciencias Naturales y Tecnología, Universidad de Aysén, Obispo Vielmo 62, Coyhaique, Chile Departamento de Física and Center for Soft Matter Research, SMAT-C, Universidad de Santiago de Chile, Avenida… Expand
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