Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric

@article{Huo2002SiliconbasedHI,
  title={Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric},
  author={Xiao Huo and K. J. Chen and P. C. H. Chan},
  journal={IEEE Electron Device Letters},
  year={2002},
  volume={23},
  pages={520-522}
}
We have fabricated high-Q copper inductors using low-K benzocyclobutene (BCB) dielectric as an interface layer on standard CMOS silicon substrate. Metal ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. The inductors exhibit Q-factors as high as 25 at 2 GHz. The dependence of inductor's high-frequency performance on inductor's parameters, such as BCB… CONTINUE READING
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