Silicon Substrates With Buried Distributed Bragg Reflectors for Resonant Cavity-Enhanced Optoelectronics


We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated resonant cavity-enhanced Si photodetectors with 40% quantum… (More)

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