Silicon Substrate Engineered High-Voltage High-Temperature GaN-DHFETs

@article{Srivastava2013SiliconSE,
  title={Silicon Substrate Engineered High-Voltage High-Temperature GaN-DHFETs},
  author={P. Srivastava and Jo Das and R. Mertens and G. Borghs},
  journal={IEEE Transactions on Electron Devices},
  year={2013},
  volume={60},
  pages={2217-2223}
}
Low-cost GaN-on-Si-based transistors are targeted to function at high ambient temperatures. With this perspective, it is aimed to evaluate the high-temperature (HT) capabilities of GaN-on-Si double-heterostructure field-effect transistors. It is highlighted that HT device operation degrades both ON and OFF states that are directly related to the increase in… CONTINUE READING