Silicon Schottky barriers and p-n junctions with highly stable aluminum contact metallization

Abstract

Reactively sputtered amorphous Ta/sub 36/Si/sub 14/N/sub 50/ thin films are investigated as diffusion barriers to improve the thermal stability of contacts to electronic devices, specifically between Al overlayers and Si substrates. Electrical measurements on Schottky diodes and on shallow n/sup +/-p junction diodes are used to evaluate the thermal… (More)

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@article{Halperin1991SiliconSB, title={Silicon Schottky barriers and p-n junctions with highly stable aluminum contact metallization}, author={L. E. Halperin and Meir Bartur and E. Kolawa and M A Nicolet}, journal={IEEE Electron Device Letters}, year={1991}, volume={12}, pages={309-311} }