Silicon Material Properties for VLSI Circuitry

@inproceedings{Lawrence1982SiliconMP,
  title={Silicon Material Properties for VLSI Circuitry},
  author={Johnathan E. Lawrence and Howard R. Huff},
  year={1982}
}
Publisher Summary This chapter defines VLSI as a circuit composed of at least 10 5 active electronic gates (AEGs) per die. VLSI structures will provide for high-speed—low-delay-time—circuitry that consumes little power in the smallest possible area of a silicon wafer. The active components of the VLSI circuit will likely be concentrated in a region limited to the micrometer of silicon nearest the wafer surface. Within this micrometer, the VLSI structure may consist of multiple layers of p–n… CONTINUE READING