Silicon Inverse Opal—A Platform for Photonic Bandgap Research

@article{Ttreault2004SiliconIO,
  title={Silicon Inverse Opal—A Platform for Photonic Bandgap Research},
  author={Nicolas T{\'e}treault and Hern{\'a}n M{\'i}guez and Geoffry A. Ozin},
  journal={Advanced Materials},
  year={2004},
  volume={16}
}
This article focuses attention on recent research on the silicon inverse opal, the first self‐assembled or bottom–up synthetic photonic crystal to exhibit a complete photonic bandgap (PBG) at 1.5 μm[1] in accordance with theoretical predictions.[2] The silicon inverse opal has since proven to be a useful platform for assembling on‐chip films[3] and in‐chip patterns,[4] engineering extrinsic defects,[5] mapping photon density of states,[6] switching light with light, and inhibiting spontaneous… 

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TLDR
To reach the authors' objectives, i-Si-o was fabricated by infiltrating the voids of a silica-opal template with Si using chemical vapor deposition (CVD), and subsequently etching the silica spheres with hydrofluoric acid (HF).
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