Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range

@article{Ghandi2014SiliconCI,
  title={Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range},
  author={Reza Ghandi and Cheng-Po Chen and Liang Yin and Xingguang Zhu and Liangchun C Yu and S. D. Arthur and Faisal R. Ahmad and Peter M. Sandvik},
  journal={IEEE Electron Device Letters},
  year={2014},
  volume={35},
  pages={1206-1208}
}
In this letter, silicon carbide MOSFET-based integrated circuits have been designed, fabricated, and successfully tested from -193 °C (80 K) to 500 °C. Silicon carbide single MOSFETs remained fully operational over a 700-°C wide temperature range and exhibited stable I-V characteristics. The circuits that include operational amplifier (op-amp), 27-stage ring oscillator, and buffer were tested and shown to be functional up to 500 °C with relatively small performance variation between 300 °C and… CONTINUE READING

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