Silicon Carbide Emitter Turn-off Thyristor, A Promising Technology For High Voltage and High Frequency Applications

@article{Wang2009SiliconCE,
  title={Silicon Carbide Emitter Turn-off Thyristor, A Promising Technology For High Voltage and High Frequency Applications},
  author={Jun Wang and Gangyao Wang and Jun Li and Alex Q. Huang},
  journal={2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition},
  year={2009},
  pages={658-664}
}
A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off thyristor (ETO), as a promising technology for future high voltage high frequency switching applications has been developed. The world's first 4.5-kV SiC p type ETO prototype based on a 0.36 cm2 SiC p type GTO shows a forward voltage drop of 4.6 V at a current density of 25 A/cm2 and a turn-off energy loss of 9.88 mJ. The low loss indicates that the SiC ETO could operate at a 4 kHz frequency with a conventional thermal… CONTINUE READING