Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications

@inproceedings{Licentiate2012SiliconCB,
  title={Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications},
  author={LUIGIA LANNI Licentiate},
  year={2012}
}
  • LUIGIA LANNI Licentiate
  • Published 2012
Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well above 600 °C) allow high temperature operation of SiC devices and relaxed cooling requirements. In particular, SiC bipolar junction transistors (BJTs) are suitable for high temperature integrated… CONTINUE READING