Significant Reduction of Dynamic Negative Bias Stress-Induced Degradation in Bridged-Grain Poly-Si TFTs

Abstract

The device degradation of bridged-grain (BG) polycrystalline silicon thin-film transistors under dynamic negative bias stress (NBS) is investigated for the first time. By employing a BG structure in the active channel, dynamic NBS-induced hot carrier degradation could be significantly reduced from -99.9% to -2.4% (10<sup>4</sup> s dynamic NBS), which is… (More)

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@article{Zhang2015SignificantRO, title={Significant Reduction of Dynamic Negative Bias Stress-Induced Degradation in Bridged-Grain Poly-Si TFTs}, author={Meng Zhang and Zhihe Xia and Wei Zhou and Rongsheng Chen and Man Wong}, journal={IEEE Electron Device Letters}, year={2015}, volume={36}, pages={141-143} }