• DOI:10.1038/s41524-021-00632-3
• Corpus ID: 238233444

Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

@article{Zhou2021SignreversibleVB,
  title={Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors},
  author={Xiaodong Zhou and Run-wu Zhang and Zeying Zhang and Wanxiang Feng and Yuriy Mokrousov and Yugui Yao},
  journal={npj Computational Materials},
  year={2021},
  volume={7},
  pages={1-7}
}

• Xiaodong Zhou, Run-wu Zhang, +3 authors Yugui Yao
• Published 11 June 2021
• Physics
• npj Computational Materials

Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More importantly, by using valley-half-semiconducting VSi 2 N 4 as an outstanding example, we investigate sign change of valley-dependent Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain, electric field, and correlation effects. As a result, this gives rise to quantized versions of valley anomalous transport phenomena. Our findings not only uncover a general framework to control valley degree of freedom, but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics.