SiGe cantilever channel gate-all-around (GAA) fully depleted (FD) PMOSFET with high-κ and metal gate

Abstract

Scaling the conventional CMOS transistor beyond the 45 nm generation ushers in several fundamental limitations. Control of leakage currents and sustaining electrostatic integrity while maintaining historic enhancements in performance requires such ultra-thin gate-dielectrics and heavily doped bodies that a process window sufficiently large for manufacturing… (More)

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