SiGe HBT Power Amplifier design using 0.35 µm BiCMOS technology with through-silicon-via

@article{Zhang2011SiGeHP,
  title={SiGe HBT Power Amplifier design using 0.35 µm BiCMOS technology with through-silicon-via},
  author={Jingyang Zhang and Dawn Wang and Hanyi Ding and John Gillis and Wan Ni and Susan L. Sweeney and Dasheng Fang},
  journal={2011 9th IEEE International Conference on ASIC},
  year={2011},
  pages={1082-1085}
}
This paper presents Silicon Germanium (SiGe) HBT Power Amplifier design challenges and performances using 0.35 µm SiGe BiCMOS technology with a novel low inductance through-silicon-via (TSV). The large signal load pull on SiGe HBT power cells were performed, and a two-stage power amplifier was designed and measured with tunable input, inter-stage and output matching networks. For a 480 um2 SiGe HBT power cell, the peak power-added efficiency (PAE) reaches 63% with 20 dBm P1dB and 71% with 21… CONTINUE READING

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Key Quantitative Results

  • For a 480 um2 SiGe HBT power cell, the peak power-added efficiency (PAE) reaches 63% with 20 dBm P1dB and 71% with 21 dBm P1dB at 3.5 GHz and 2.5 GHz respectively.

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