SiGe:C HBT architecture with epitaxial external base

@article{Fox2011SiGeCHA,
  title={SiGe:C HBT architecture with epitaxial external base},
  author={Alexander Fox and Bernd Heinemann and Rainer Barth and Steffen Marschmeyer and Ch. Wipf and Yuji Yamamoto},
  journal={2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting},
  year={2011},
  pages={70-73}
}
We present a novel double-polysilicon (DP) HBT technology with a SiGe:C base fabricated by selective epitaxial growth (SEG), in which the external base is formed by in-situ doped epitaxy completely after the internal base. This approach aims to achieve a lower parasitic base resistance compared to our previously reported DP-SEG technology [8], while keeping a low capacitive lateral base link arrangement. We demonstrate fT/fmax of 310GHz/480GHz, as well as a CML gate delay of 1.9ps, achieving… CONTINUE READING
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