SiCGe Ternarv Allovs - Extending Si-based Heterostructures

Abstract

We have synthesized Si<inf>1-y</inf> C<inf>y</inf>and Si<inf>1-x-y</inf>C<inf>y</inf>Ge<inf>x</inf>alloys using Molecular Beam Epitaxy. When combined with the Si-Ge system. the new ternary system offers greater versatility and freedom in strain and bandgap engineering. Unlike the Si-Ge system the Si-C system has a high misfit (52%) and low solubility… (More)

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Cite this paper

@article{Iyer1992SiCGeTA, title={SiCGe Ternarv Allovs - Extending Si-based Heterostructures}, author={S. S. Iyer and K. Eberl and A. Powell and B. A. Ek}, journal={ESSDERC '92: 22nd European Solid State Device Research conference}, year={1992}, pages={351-354} }