SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen

@inproceedings{Hartmann2012SiCSP,
  title={SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen},
  author={Carsten Hartmann and Martin Albrecht and Juergen Wollweber and Josephine Schuppang and Uta Juda and Christo Guguschev and S. Golka and Andrea Dittmar and Roberto Fornari},
  year={2012}
}
Abstract The structural properties of the heteroepitaxially grown AlN on off-axis 4H-/6H-SiC by PVT are presented in dependence of the seed polarity. In addition to long-term growth runs (48–72 h) short-term experiments were carried out in order to investigate the initial growth stage. SEM, EDX, HR-TEM and HR-XRD studies show different growth modes for C-polar and Si-polar SiC seeds. The main cause is the anisotropic oxidation of SiC by Al 2 O(g) which is formed during heating up in the AlN… CONTINUE READING

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