SiC power device reliability

@article{Gajewski2016SiCPD,
  title={SiC power device reliability},
  author={Donald A. Gajewski and Brett Hull and Daniel J. Lichtenwalner and Sei-hyung Ryu and E. Bonelli and Habib A. Mustain and Gangyao Wang and Scott T. Allen and John W. Palmour},
  journal={2016 IEEE International Integrated Reliability Workshop (IIRW)},
  year={2016},
  pages={29-34}
}
SiC power devices offer performance advantages over competing Si-based power devices, due to the wide bandgap and other key materials properties of 4H-SiC. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings (up to 10 kV), and with lower switching losses. [] Key Result Finally, we present field return data that demonstrates less than 5 FIT (fails per billion device hours) for commercially produced SiC MOSFETs and Schottky diodes, with over 2 trillion device field…
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Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics
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