SiC power device reliability

  title={SiC power device reliability},
  author={Donald A. Gajewski and Brett Hull and Daniel J. Lichtenwalner and Sei-hyung Ryu and E. Bonelli and Habib A. Mustain and Gangyao Wang and Scott T. Allen and John W. Palmour},
  journal={2016 IEEE International Integrated Reliability Workshop (IIRW)},
SiC power devices offer performance advantages over competing Si-based power devices, due to the wide bandgap and other key materials properties of 4H-SiC. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings (up to 10 kV), and with lower switching losses. [] Key Result Finally, we present field return data that demonstrates less than 5 FIT (fails per billion device hours) for commercially produced SiC MOSFETs and Schottky diodes, with over 2 trillion device field…
Accelerated Testing of SiC Power Devices under High-Field Operating Conditions
Power metal-oxide-semiconductor field-effect transistors (MOSFETs) experience conditions of high field during normal operation. During switching conditions, unexpected transient events may occur
Robustness Evaluation and Degradation Mechanisms of SiC MOSFETs Overstressed by Switched Stimuli
Evaluation of the robustness of SiC power MOS-FETs outside the safe-operating-area (SOA) conditions is key for their applications in many power electronics applications. Traditional test methods,
Power Cycling Capability and Lifetime Estimation of Discrete Silicon Carbide Power Devices
In this work, the three most common lifetime models for power semiconductors i.e. LESIT, CIPS08 and SKiM63 are investigated regarding their applicability for SiC power devices. For this reason,
Reliability Challenges for SiC Power Devices in Systems and the Impact on Reliability Testing
The reliability of SiC devices remains to be a field of hectic activity because it is one of the obstacles for the ubiquitous application of SiC devices. Without decades of field experience,
Gaining Confidence - A Review of Silicon Carbide's Reliability Status
AfterSiC devices have matured to a level at which standard applications are no longer affected by reliability issues, it is now time to find out how far SiC devices can be pushed or what safety margin are required.
Impact of Accelerated Stress-Tests on SiC MOSFET Precursor Parameters
Integrating SiC power MOSFETs is very attractive for advancing power electronic system performance, yet the system reliability with new devices remains in question. This work presents an overview of
Characterization, modeling and aging behavior of GaN power transistors
This thesis presents theoretical and experimental works to understand better the reliability linked to this phenomenon and the possible interaction with ageing in power cycling conditions of GaN High Electron Mobility Transistors (HEMT) reliability for power applications.
Trade-offs Between Gate Oxide Protection and Performance in SiC MOSFETs
The reliability of gate oxides in SiC MOSFETs has come under increased scrutiny due to reduced performance under time dependent dielectric breakdown and increased threshold voltage instability. This
Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching
This work presents the ruggedness of SiC power MOSFETs outside the safe-operating-area (SOA) conditions based on a hard-switching cycling test. The device was stressed to withstand overvoltage and
Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics
The quality of the gate-oxide and Oxide/SiC interfaces is one of the crucial issues in the implementation of silicon carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) in the


Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
  • J. Palmour, L. Cheng, C. Scozzie
  • Physics, Engineering
    2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
  • 2014
Since Cree, Inc.'s 2<sup>nd</sup> generation 4H-SiC MOSFETs were commercially released with a specific on-resistance (R<sub>ON, SP</sub>) of 5 mΩ·cm<sup>2</sup> for a 1200 V-rating in early 2013, we
Failure rates of IGCTs due to cosmic rays
for a better worldTM In the early 1990’s a new failure mode for high current, high voltage semiconductor devices was discovered. The failure mode was of considerable practical significance and caused
Fast power cycling test of IGBT modules in traction application
The numerous advantages of insulated gate bipolar transistor (IGBT) power modules and their ongoing development for higher voltage and current ratings make them interesting for traction applications.
Terrestrial Neutron Induced Failures in Commercial SiC Power MOSFETs at 27C and 150C
Experimental investigation of neutron induced single event failures in silicon carbide (SiC) power MOSFETs at room temperature and 150C is presented. The cross sections for failures at high
Acceleration Factors for Thin Gate Oxide Stressing
Time dependent dielectric breakdown (TDDB) data for 100Å of thermally grown SiO2 has been analyzed using an Eyring model based on thermodynamic free energy considerations. The model describes well
Radiation Effects Data Workshop (REDW)
  • 2015
Poech Fast Power Cycling Test for IGBT Modules in Traction Application
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Poech ³Fast Power Cycling Test for IGBT Modules in Traction Application
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Factors for Thin Gate IEEE IRPS
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