SiC and GaN Devices - Competition or Coexistence?

@article{Kaminski2012SiCAG,
  title={SiC and GaN Devices - Competition or Coexistence?},
  author={N. Kaminski and Oliver Hilt},
  journal={2012 7th International Conference on Integrated Power Electronics Systems (CIPS)},
  year={2012},
  pages={1-11}
}
SiC-diodes are commercially available for 10 years and various SiC-switches have been commercialised recently. Now GaN-devices are emerging and first low voltage devices are already on the market. With their respective advantages and disadvantages the individual devices are well suited for some applications, while they are not suited for others. Currently, it seems that GaN-transistors are ideal for high frequency integrated circuits up to 1000 V (maybe 2000 V) and maximum a few 10 A while SiC… CONTINUE READING
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