SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode

Abstract

A silicon carbide (SiC) trench MOSFET (TMOS) with integrated three-level protection (TLP) Schottky barrier diode (SBD), named ITS-TMOS, is proposed and investigated by simulation. The device features the integrated TLP-SBD that remarkably improves body diode characteristics while guarantees excellent fundamental performance of TMOS. In the blocking state… (More)

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