Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals

@article{Horvth2009Si3N4BN,
  title={Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals},
  author={Zsolt J. Horv{\'a}th and Peter Basa and Tamas Jaszi and Andrea Edit Pap and Gyorgy Molnar and Anatoly I Kovalev and Dmitry Wainstein and P{\'e}ter Turmezei},
  journal={2009 32nd International Spring Seminar on Electronics Technology},
  year={2009},
  pages={1-4}
}
Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control and SiO2 tunnel layers. It was obtained that a properly located layer of Si or Ge nanocrystals can improve both the charging and rettntion behaviour of the MNOS structures simultaneously. Memory window width of… CONTINUE READING