Shunt characterization technique of decoupling transmission line for millimeter-wave CMOS amplifier design

@article{Tokgoz2014ShuntCT,
  title={Shunt characterization technique of decoupling transmission line for millimeter-wave CMOS amplifier design},
  author={Korkut Kaan Tokgoz and Kimsrun Lim and Kenichi Okada and Akira Matsuzawa},
  journal={2014 Asia-Pacific Microwave Conference},
  year={2014},
  pages={274-276}
}
A shunt characterization method is proposed to characterize a very low impedance transmission line (TL), which is used for decoupling of DC and RF in millimeter-wave CMOS circuits. Since metal-insulator-metal (MIM) capacitors are used to achieve very low impedance the TL named as MIM TL. Two structures are used for this method. S-parameters of MIM TL are calculated using reflections. The results match better than direct measurement method from 1 to 110 GHz.