Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

  title={Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons},
  author={Juan Pablo Llinas and Andrew Fairbrother and Gabriela Borin Barin and Wu Shi and Kyunghoon Lee and Shuang Wu and Byung Yong Choi and Rohit Braganza and Jordan Lear and Nicholas Kau and Wonwoo Choi and Chen Chen and Zahra Pedramrazi and Tim Dumslaff and Akimitsu Narita and Xinliang Feng and Klaus M{\"u}llen and Felix R. Fischer and Alex Zettl and Pascal Ruffieux and Eli Yablonovitch and Michael F. Crommie and Roman Fasel and Jeffrey Bokor},
  journal={Nature Communications},
Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (Lch ~ 20 nm) devices with a thin, high-κ gate… 

Sub-10-nm graphene nanoribbons with atomically smooth edges from squashed carbon nanotubes

Graphene nanoribbons are of potential use in the development of electronic and optoelectronic devices. However, the preparation of narrow and long nanoribbons with smooth edges, sizeable bandgaps and

A computational study of short-channel effects in double-gate junctionless graphene nanoribbon field-effect transistors

  • K. Tamersit
  • Physics
    Journal of Computational Electronics
  • 2019
As the channel length shrinks below the 10-nm regime, emerging materials, junctionless technology, and multiple-gate geometries provide an excellent combination to continue progress towards

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: Graphene nanoribbons (GNRs) have demonstrated great potential for nanoscale devices owing to their excellent electrical properties. However, the application of the GNRs in large-scale devices still

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The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively

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Author(s): Llinas, Juan Pablo | Advisor(s): Bokor, Jeffrey | Abstract: Advancements in on-surface materials synthesis have led to the development of atomically precise graphene nanoribbons (GNRs).

Monolayer MoS 2 Nanoribbon Transistors Fabricated by Scanning Probe Lithography

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Computational study of tunneling transistor based on graphene nanoribbon.

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Ultimate device scaling: Intrinsic performance comparisons of carbon-based, InGaAs, and Si field-effect transistors for 5 nm gate length

We use a single, multi-dimensional, and atomistic quantum transport simulator to investigate how far carbon nanotube, graphene nanoribbon, InGaAs, and Si ultra-thin body and nanowire n-type

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Length scaling of carbon nanotube transistors.

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Molecular bandgap engineering of bottom-up synthesized graphene nanoribbon heterojunctions.

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On-surface synthesis of graphene nanoribbons with zigzag edge topology

It is expected that the availability of ZGNRs will enable the characterization of their predicted spin-related properties, such as spin confinement and filtering, and will ultimately add the spin degree of freedom to graphene-based circuitry.