• DOI:10.1038/s41467-017-00734-x
• Corpus ID: 26906678

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

@article{Llinas2016ShortchannelFT,
  title={Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons},
  author={Juan Pablo Llinas and Andrew Fairbrother and Gabriela Borin Barin and Wu Shi and Kyunghoon Lee and Shuang Wu and Byung Yong Choi and Rohit Braganza and Jordan Lear and Nicholas Kau and Wonwoo Choi and Chen Chen and Zahra Pedramrazi and Tim Dumslaff and Akimitsu Narita and Xinliang Feng and Klaus M{\"u}llen and Felix R. Fischer and Alex Zettl and Pascal Ruffieux and Eli Yablonovitch and Michael F. Crommie and Roman Fasel and Jeffrey Bokor},
  journal={Nature Communications},
  year={2016},
  volume={8}
}

• J. Llinas, A. Fairbrother, +21 authors J. Bokor
• Published 22 May 2016
• Physics
• Nature Communications

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (Lch ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (Ion > 1 μA at Vd = −1 V) and high Ion/Ioff ~ 105 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps. Here, the authors use a bottom-up synthesis approach to fabricate 9- and 13-atom wide ribbons, enabling short-channel transistors with 105 on-off current ratio.