Short SiGe HBT electro-absorption modulator

@article{Wu2012ShortSH,
  title={Short SiGe HBT electro-absorption modulator},
  author={Pengfei Wu and Shengling Deng and Z. Rena Huang},
  journal={IEEE Photonics Conference 2012},
  year={2012},
  pages={282-283}
}
A SiGe HBT electro-absorption modulator with a device length of 69 μm is proposed. Calculations show that the modulator works at a speed of 25 GHz and can achieve a 10 dB extinction ratio.