Short Channel Effects suppression in a dual-gate Gate-All-Around Si nanowire junctionless nMOSFET


Advances in short channel transistor technology has allowed the emergence of these devices in modern chips. These transistors experience many different types of Short Channel Effects (SCE) that are addressed in this work. Using TCAD simulations, we report a new and effective technique to reduce SCE in a novel dual-gate silicon nanowire Gate-All-Around (GAA… (More)


6 Figures and Tables