Shape evolution of Ge domes on Si (001) during Si capping

  title={Shape evolution of Ge domes on Si (001) during Si capping},
  author={Angela Rastelli and M. W. Kummer and Hans von Kaenel},
Three-dimensional, coherently strained Ge/Si (001) islands were overgrown with thin Si layers and their shape evolution was studied by scanning tunneling microscopy. The Si cap, necessary for exploiting the clusters as self-assembled quantum dots, intermixes with the Ge layer leading the dome-shaped islands to transform first into {105} faceted pyramids and finally into stepped mounds with steps parallel to the 〈110〉 directions. The observed morphological transitions can be understood in a… CONTINUE READING


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