Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids

@article{Carrad2020ShadowEF,
  title={Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids},
  author={Damon J. Carrad and Martin Bjergfelt and Thomas Kanne and Martin Aagesen and Filip Krizek and Elisabetta Maria Fiordaliso and Erik Johnson and Jesper Nyg{\aa}rd and Thomas Sand Jespersen},
  journal={Advanced Materials},
  year={2020},
  volume={32}
}
Uniform, defect‐free crystal interfaces and surfaces are crucial ingredients for realizing high‐performance nanoscale devices. A pertinent example is that advances in gate‐tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity‐induced superconducting gap obtained from epitaxial indium arsenide/aluminum heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids… 

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