• Corpus ID: 116891402

Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors

@article{Mouttet2011SetRA,
  title={Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors},
  author={B. Mouttet},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2011}
}
  • B. Mouttet
  • Published 1 May 2011
  • Materials Science, Physics
  • arXiv: Mesoscale and Nanoscale Physics
A dynamic systems model has previously been proposed for mem-resistors based on a driven damped harmonic oscillator differential equation describing electron and ionic depletion widths in a thin semiconductor film. This paper derives equations for set, reset, and retention times based on the previously proposed model. Keywords- mem-resistor, RRAM, ReRAM 

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References

SHOWING 1-2 OF 2 REFERENCES
Dynamic Systems Model for Ionic Mem-Resistors based on Harmonic Oscillation
Memristive system models have previously been proposed to describe ionic memory resistors. However, these models neglect the mass of ions and repulsive forces between ions and are not well formulated
Dynamic Systems Model for Filamentary Mem-Resistors
A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated