Session 12: Memory technology - resistive memory and magnetic memory

Abstract

Most updated progress in resistive memory is presented in the first part of this section. In the first paper, Dr. Waser presents the review of mechanism of resistive switching. Highly reliable ReRAM based on TaO<inf>x</inf> has exhibited the endurance over 109 cycles and 10 years retention at 85&#x00B0;C. With a thin reactive Ti buffer layer in HfO<inf>2… (More)

Cite this paper

@article{Fang2008Session1M, title={Session 12: Memory technology - resistive memory and magnetic memory}, author={Tzu-Ning Fang and Tsugutoshi Sakamoto}, journal={2008 IEEE International Electron Devices Meeting}, year={2008}, pages={1-1} }