Separation of channel backscattering coefficients in nanoscale MOSFETs

@article{Chen2004SeparationOC,
  title={Separation of channel backscattering coefficients in nanoscale MOSFETs},
  author={Ming-Jer Chen and Huan-Tsung Huang and Yi-Chin Chou and Rong-Ting Chen and Yin-Ta Tseng and Po-Nien Chen and C. H. Diaz},
  journal={IEEE Transactions on Electron Devices},
  year={2004},
  volume={51},
  pages={1409-1415}
}
Channel backscattering coefficients in the k/sub B/T layer (near the source) of 1.65-nm-thick gate oxide, 68-nm gate length bulk n-channel MOSFETs are systematically separated into two distinct components: the quasithermal-equilibrium mean-free-path for backscattering and the width of the k/sub B/T layer. Evidence to confirm the validity of the separation… CONTINUE READING