Sensitive detection of holes generated by impact ionization in silicon

@article{Firdaus2017SensitiveDO,
  title={Sensitive detection of holes generated by impact ionization in silicon},
  author={Hina Firdaus and Masahiro Hori and Yumi Takahashi and Akira Fujiwara and Yukinori Ono},
  journal={2017 Silicon Nanoelectronics Workshop (SNW)},
  year={2017},
  pages={29-30}
}
Impact ionization [1,2], or electron-hole pair creation by charged particles, has been one of the central issues of semiconductor physics and devices. However, due to its complexity of the process, most experimental studies and their analyses have been macroscopic and phenomenological. This situation prevents us from exploring the fundamental physics of… CONTINUE READING