Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.

@article{Rigante2015SensingWA,
  title={Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.},
  author={S. Rigante and Paolo Scarbolo and Mathias Wipf and Ralph Lukas Stoop and K. Bedner and Elizabeth Buitrago and Antonios Bazigos and Didier Bouvet and Michel Calame and Christian Sch{\"o}nenberger and Adrian M. Ionescu},
  journal={ACS nano},
  year={2015},
  volume={9 5},
  pages={4872-81}
}
Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suitable device architectures for sensing integrated circuits. In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon by a… CONTINUE READING
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