Sensing magnetic fields in any direction using FinFETs and L-gate FinFETs

@article{Perin2012SensingMF,
  title={Sensing magnetic fields in any direction using FinFETs and L-gate FinFETs},
  author={Andr{\'e} Luiz Perin and Renato C. Giacomini},
  journal={2012 IEEE International SOI Conference (SOI)},
  year={2012},
  pages={1-2}
}
The best-explored integrated magnetic field sensors are built with planar IC technologies, which do not allow 3D sensing in standard fabrication processes due to their bi-dimensional nature. Unlike planar devices, FinFETs can be used to sense magnetic fields in any direction. This work proposes and evaluates the use of FinFETs as magnetic sensors. The sensibility of FinFET differential arrays to lateral and vertical magnetic fields is quantified. This work also proposes the L-shaped gate, to… CONTINUE READING

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