Semiconductor switches based pulse power generator for plasma source ion implantation

@article{Kim2004SemiconductorSB,
  title={Semiconductor switches based pulse power generator for plasma source ion implantation},
  author={J H Kim and M. H. Ryu and S. V. Shenderey and J. S. Kim and G. H. Rim},
  journal={Conference Record of the Twenty-Sixth International Power Modulator Symposium, 2004 and 2004 High-Voltage Workshop.},
  year={2004},
  pages={378-382}
}
Semiconductor switches based pulse power generator for plasma source ion implantation is proposed in this study. The pulse generator consists of six IGBT stacks and a step-up pulse transformer. To increase the current rating of the pulse generator, three six IGBT stacks are used in parallel and to increase voltage rating of the pulse generator, twelve IGBTs… CONTINUE READING