Semiconductor optical amplifiers grown on a metamorphic substrate for long wavelength applications.

Abstract

A semiconductor optical amplifier is grown on an InAsP metamorphic substrate to extend the long wavelength accessibility of the amplifier. The amplifier is shown to produce gain at wavelength exceeding 1640 nm while containing large tensile strain in the quantum wells. Also a laser diode is fabricated from the same device structure.

DOI: 10.1088/0957-4484/21/13/134005

Cite this paper

@article{Czaban2010SemiconductorOA, title={Semiconductor optical amplifiers grown on a metamorphic substrate for long wavelength applications.}, author={Josef A Czaban and Dennis A. Thompson}, journal={Nanotechnology}, year={2010}, volume={21 13}, pages={134005} }