Semiconductor lasers with a thin active layer (>0.1 microm for optical communications.

Abstract

Double heterostructure lasers with a thin active layer have been investigated. Device parameters have been optimized for using laser diodes as light sources in optical communication systems. Threshold current density takes a minimum value for an active layer thickness of around 800 A in the case of undoped active layers. Full width of beam divergence for… (More)
DOI: 10.1364/AO.17.000311

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