Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge 1 − x Sn x alloys

@article{Lan2017SemiconductorTS,
  title={Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge 1 − x Sn x alloys},
  author={Huang-Siang Lan and S. T. Chang and C. W. Liu},
  journal={Physical Review B},
  year={2017},
  volume={95},
  pages={201201}
}
Electronic structures of ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}$ alloys $(0\ensuremath{\le}x\ensuremath{\le}1)$ are theoretically studied by the nonlocal empirical pseudopotential method. For relaxed ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}$, a topological semimetal is found for $\mathit{\text{x}}g41%$ with gapless and band inversion at the $\mathrm{\ensuremath{\Gamma}}$ point, while there is an indirect-direct band-gap transition at $x=8.5%$. For strained ${\mathrm{Ge}}_… 

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