# Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge 1 − x Sn x alloys

@article{Lan2017SemiconductorTS, title={Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge 1 − x Sn x alloys}, author={Huang-Siang Lan and S. T. Chang and C. W. Liu}, journal={Physical Review B}, year={2017}, volume={95}, pages={201201} }

Electronic structures of ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}$ alloys $(0\ensuremath{\le}x\ensuremath{\le}1)$ are theoretically studied by the nonlocal empirical pseudopotential method. For relaxed ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Sn}}_{x}$, a topological semimetal is found for $\mathit{\text{x}}g41%$ with gapless and band inversion at the $\mathrm{\ensuremath{\Gamma}}$ point, while there is an indirect-direct band-gap transition at $x=8.5%$. For strained ${\mathrm{Ge}}_…

## 19 Citations

Valence band structure calculations of strained Ge$_{1-x}$Sn$_x$ quantum well pFETs

- Materials Science, Physics
- 2017

The dependence of valence band structures of Ge$_{1-x}$Sn$_x$ with 0 $\leq$ $x$ $\leq$ 0.2 on Sn content, biaxial strain, and substrate orientation is calculated using the nonlocal empirical…

Low Contact Resistivity to Ge Using In-Situ B and Sn Incorporation by Chemical Vapor Deposition

- Materials ScienceIEEE Transactions on Electron Devices
- 2020

The low contact resistivity with the median value of <inline-formula> <tex-math notation="LaTeX">$3.1\times 10^{-{9}}\,\,\Omega \cdot \text {cm}^{{2}}$ </tex-math></inline-formula> (the lowest value…

Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

- Materials Science, PhysicsApplied Physics Letters
- 2019

$\text{Ge}_{1-y}\text{Sn}_y$ alloys with compositions in the 0.15 < $y$ < 0.30 range have been grown directly on Si substrates using a chemical vapor deposition approach that allows for growth…

Uniform 4-Stacked Ge0.9Sn0.1 Nanosheets Using Double Ge0.95Sn0.05 Caps by Highly Selective Isotropic Dry Etch

- IEEE Transactions on Electron Devices
- 2021

The undoped 4-stacked Ge<sub>0.9</sub>Sn<sub>0.1</sub> nanosheets sandwiched by double Ge<sub>0.95</sub>Sn<sub>0.05</sub> caps without parasitic Ge channels underneath are realized by a radical-based…

Effects of Annealing on the Behavior of Sn in GeSn Alloy and GeSn-Based Photodetectors

- Materials ScienceIEEE Transactions on Electron Devices
- 2020

Ge<inline-formula> <tex-math notation="LaTeX">$_{{1}-{x}}$ </tex-math></inline-formula>Sn<sub><italic>x</italic></sub> alloy films with Sn contents of 3% and 10% were grown on Si wafers by…

Impact of stoichiometry and strain on Ge1−x Sn x alloys from first principles calculations

- Physics, Materials Science
- 2021

We calculate the electronic structure of germanium-tin (Ge1−x Sn x ) binary alloys for 0⩽x⩽1 using density functional theory (DFT). Relaxed alloys with semiconducting or semimetallic behaviour as a…

Dielectric function and band structure of Sn1−xGex (x < 0.06) alloys on InSb

- Materials ScienceApplied Physics Letters
- 2019

Tin-rich Sn1−xGex alloys with Ge contents up to 6% were grown pseudomorphically on InSb (001) substrates by molecular beam epitaxy at room temperature. The alloys show a germanium-like lattice and…

Valence band structure calculations of strained Ge 1 − x Sn x quantum well pFETs

- 2018

The dependence of valence band structures of Ge1−xSnx with 0 ≤ x ≤ 0.2 on Sn content, biaxial strain, and substrate orientation is calculated using the nonlocal empirical pseudopotential method. The…

Valence band structure calculations of strained Ge1−xSnx quantum well pFETs

- 2021

The dependence of valence band structures of Ge1−xSnx with 0 ≤ x ≤ 0.2 on Sn content, biaxial strain, and substrate orientation is calculated using the nonlocal empirical pseudopotential method. The…

Band structure critical point energy in germanium–tin alloys with high tin contents

- Materials ScienceApplied Physics Letters
- 2021

The dielectric functions of germanium–tin alloy thin-films, deposited by molecular beam epitaxy on bulk Ge substrates, with relatively high Sn contents from 15 to 27 at. %, were measured by variable…

## References

Osamu Nakatsuka , Shigehisa Shibayama , Mitsuo Sakashita , Wakana Takeuchi , Masashi Kurosawa , and Shigeaki Zaima

- Appl . Phys . Lett .
- 2007