Semiconducting behavior of type-I Si clathrate K8Ga8Si38.

@article{Imai2011SemiconductingBO,
  title={Semiconducting behavior of type-I Si clathrate K8Ga8Si38.},
  author={Motoharu Imai and Akira Sato and Haruhiko Udono and Yoji Imai and Hiroyuki Tajima},
  journal={Dalton transactions},
  year={2011},
  volume={40 16},
  pages={4045-7}
}
A ternary type-I Si clathrate K(8)Ga(8)Si(38) has been revealed to be an indirect band gap semiconducting material with an energy gap (E(g)) of approximately 0.10 eV, which is much smaller than the calculated E(g) value that is 0.15 eV wider than E(g) of elemental Si with the diamond-type structure.