Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors

@article{Gnudi2013SemianalyticalMO,
  title={Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors},
  author={Antonio Gnudi and Susanna Reggiani and Elena Gnani and Giorgio Baccarani},
  journal={IEEE Transactions on Electron Devices},
  year={2013},
  volume={60},
  pages={1342-1348}
}
A 2-D semianalytical solution for the electrostatic potential valid for junctionless symmetric double-gate field-effect transistors in subthreshold regime is proposed, which is based on the parabolic approximation for the potential and removes previous limitations. Based on such a solution, a semi-analytical expression for the current is derived. The potential and current models are validated through comparisons with TCAD simulations and are used to evaluate relevant short-channel effect… CONTINUE READING
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