Semi-empirical model to predict the threshold voltage and Id-Vd characteristics of small geometry LDD MOSFETs

@inproceedings{Kalra2000SemiempiricalMT,
  title={Semi-empirical model to predict the threshold voltage and Id-Vd characteristics of small geometry LDD MOSFETs},
  author={Ekta K. Kalra and Anil R. Kumar and Subhasis Haldar and R. S. Gupta},
  year={2000}
}
A continous semi-empirical model for small geometry lightly doped drain MOSFET is developed. The expressions for body factors, threshold voltage, drain current, conductances are derived and the results so obtained are compared with the experimental data and are in excellent agreement. 

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