Semi-empirical equations for electron velocity in silicon: Part I—Bulk

@article{Schwarz1983SemiempiricalEF,
  title={Semi-empirical equations for electron velocity in silicon: Part I—Bulk},
  author={S. A. Schwarz and S. E. Russek},
  journal={IEEE Transactions on Electron Devices},
  year={1983},
  volume={30},
  pages={1629-1633}
}
A simple semi-empirical equation for the electron drift velocity in silicon as a function of electric field and temperature is derived from elementary physical assumptions. The parameters in this equation, namely the low field mobility, effective mass, and optical phonon energy, are well defined physical quantities, Excellent agreement with the empirical Scharfetter-Gummel equation is obtained. The temperature dependence of the saturation velocity and the warm electron coefficient β are also… CONTINUE READING

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Solid State Electronics

  • S. Wang
  • New York: McGraw-Hill,
  • 1966

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