Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories

@article{Amoroso2011SemiAnalyticalMF,
  title={Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories},
  author={S. M. Amoroso and Christian Monzio Compagnoni and A. Mauri and Alessandro Maconi and A. S. Spinelli and A. L. Lacaita},
  journal={IEEE Transactions on Electron Devices},
  year={2011},
  volume={58},
  pages={3116-3123}
}
We present a detailed semi-analytical investigation of the transient dynamics of gate-all-around (GAA) charge-trap memories. To this aim, the Poisson equation is solved in cylindrical coordinates, and a modification of the well-known Fowler-Nordheim formula is proposed for tunneling through cylindrical dielectric layers. Analytical results are validated by experimental data on devices with different gate stack compositions, considering a quite extended range of gate biases and times. Finally… CONTINUE READING
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