Self-referenced sense amplifier for across-chip-variation immune sensing in high-performance Content-Addressable Memories

@article{Arsovski2006SelfreferencedSA,
  title={Self-referenced sense amplifier for across-chip-variation immune sensing in high-performance Content-Addressable Memories},
  author={Igor Arsovski and Reid Wistort},
  journal={IEEE Custom Integrated Circuits Conference 2006},
  year={2006},
  pages={453-456}
}
A memory sense-amplifier self-calibrates during sense-line precharge to reduce the required signal development and minimize data capture timing uncertainty caused by random device variation. When compared to conventional single-ended sensing, this method reduces sense time by 70% and decreases sense-power by 40%. The self-referenced sensing scheme (SRSS) is used to implement the search operation in content-addressable memory (CAM) testchip. Fabricated in 1V 65nm CMOS, this scheme achieves a 0… CONTINUE READING

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