Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects

@inproceedings{Hu2006SelfheatingSO,
  title={Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects},
  author={W. D. Hu and X. S. Chen and Zhou Jin Quan and Chang Sheng Xia and W. Lub},
  year={2006}
}
Undoped GaN-based metal-oxide-semiconductor high-electron-mobility transistors MOS-HEMTs with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 up to 40 m. Using a two-dimensional numerical simulator, we report the results of self-heating simulations of the GaN-based MOS-HEMTs, including hot electron and quantum effects. The simulated electrical characteristics are in good agreement with reported experimental data. The effect of the gate and source/drain… CONTINUE READING

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