Self-forming InAs/GaP quantum dots by direct island growth

@article{Leon1998SelfformingIQ,
  title={Self-forming InAs/GaP quantum dots by direct island growth},
  author={R. Leon and C. Lobo and T. Chin and J. Woodall and S. Fafard and S. Ruvimov and Z. Liliental-Weber and M. A. S. Kalceff},
  journal={Applied Physics Letters},
  year={1998},
  volume={72},
  pages={1356-1358}
}
InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer–Weber) rather than Stranski–Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution. Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV. Device applications exploiting broad optical emission in QDs are discussed. 
34 Citations

Figures from this paper

InAs quantum dot growth by APMOCVD
  • T. Yeoh, R. Swint, J. Coleman, C. Liu
  • Materials Science
  • 1999 Digest of the LEOS Summer Topical Meetings: Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems (Cat. No.99TH8455)
  • 1999
  • 1
Self-assembled III-V quantum dots: potential for silicon optoelectronics
  • R. Leon
  • Materials Science
  • 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496)
  • 2001
...
1
2
3
4
...