The Self-directed Channel Memristor: Operational Dependence on the Metal-Chalcogenide Layer
- Materials ScienceHandbook of Memristor Networks
The function of the SnSe layer is explored through electrical characterization of several device types in which this metal chalcogenide layer has been altered, either by changing the metal, or replacing Se with Te.
Empirical Temperature Model of Self-Directed Channel Memristor
- Chemistry2020 IEEE Sensors
Memristors are used in many innovative research areas. However, the temperature has a strong effect on mem-ristance, which results in malfunctions. Although commercial a memristor is available, its…
Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K
- Materials ScienceMicromachines
Electrical performance of self-directed channel (SDC) ion-conducting memristors which use Ag and Cu as the mobile ion source are compared over the temperature range of 6 K to 300 K and shows that the Cu- based devices exhibit hysteresis lobe collapse at lower frequencies than the Ag-based devices.
A Comprehensive Study on the Characteristics, Complex Materials and Applications of Memristor
- Chemistry2020 6th International Conference on Advanced Computing and Communication Systems (ICACCS)
This review paper throws research highlights on the characteristics, complex materials used for fabrication, various applications and approaches of memristor.
A comparative study on the forming methods of chalcogenide memristors to optimize the resistive switching performance
- Materials ScienceJournal of Physics D: Applied Physics
Most of the memristor devices require an electroforming step to initiate resistance switching in them. Electroforming a pristine memristor could alter the material composition and/or the device…
Voltage Divider for Self-Limited Analog State Programing of Memristors
- EngineeringIEEE Transactions on Circuits and Systems II: Express Briefs
The efficiency of the VD is finally compared against an adaptive pulse-based tuning protocol, in terms of circuit overhead, tuning precision, tuning time, and energy consumption, qualifying as a simple hardware solution for fast, reliable, andEnergy-efficient ML resistance tuning.
Temperature-Frequency Study of Germanium Selenide Memristors with a Self-Directed Current-Conducting Channel
- Materials ScienceRussian Microelectronics
Abstract The experimental data on the measurement of resistance and electrical conductivity in a low-resistance mode of operation of a memristor based on germanium selenide with a self-directed…
Modeling Sinusoidally Driven Self-Directed Channel Memristors
- Computer Science2018 International Conference on Signals and Electronic Systems (ICSES)
Three existing memristor models are considered: the Strukov model, the Biolek model, and the VTEAM model, Additionally, an asymmetric Strukov models is considered.
SHOWING 1-10 OF 33 REFERENCES
Synaptic behaviors and modeling of a metal oxide memristive device
- Materials Science
Nanoscale memristive devices using tungsten oxide as the switching layer have been fabricated and characterized. The devices show the characteristics of a flux-controlled memristor such that the…
AgInSbTe memristor with gradual resistance tuning
- Materials Science, Chemistry
A chalcogenide material with Ag/Ag5In5Sb60Te30/Ag structure was proposed as a memristor. Reproducible gradual resistance tuning in bipolar/unipolar modes was demonstrated. The resistance variation…
Programmable CMOS/Memristor Threshold Logic
- EngineeringIEEE Transactions on Nanotechnology
This paper proposes a hybrid CMOS/memristor implementation of a programmable threshold logic gate. In this gate, memristive devices implement ratioed diode-resistor logic, while CMOS circuitry is…
Phase-change memory devices with stacked Ge-chalcogenide/Sn-chalcogenide layers
- Materials ScienceMicroelectron. J.
Nanoscale memristor device as synapse in neuromorphic systems.
- Biology, ChemistryNano letters
A nanoscale silicon-based memristor device is experimentally demonstrated and it is shown that a hybrid system composed of complementary metal-oxide semiconductor neurons and Memristor synapses can support important synaptic functions such as spike timing dependent plasticity.
Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory
- Materials ScienceIEEE Transactions on Electron Devices
Programmable metallization cell (PMC) memory, also known as conductive bridging RAM (CBRAM), is a resistive-switching memory based on non-volatile formation and dissolution of a conductive filament…
Memristor-based synapse design and training scheme for neuromorphic computing architecture
- Computer ScienceThe 2012 International Joint Conference on Neural Networks (IJCNN)
This paper focuses on memristor-based synapse and the corresponding training circuit to mimic the real biological system and explores design implication on multi-synapse neuron system.
Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory
- PhysicsIEEE Electron Device Letters
The transition from the on (low-resistance) to the off (high-resistance) state is studied for programmable metallization cell nonvolatile memories. The stability of the on state under stress voltage…
Incremental resistance programming of programmable metallization cells for use as electronic synapses
Polarity‐dependent memory switching and behavior of Ag dendrite in Ag‐photodoped amorphous As2S3 films
- Materials Science
High cyclical reproducibility in polarity‐dependent switching and memory function was obtained. Switching and memory effect seem to occur when both electrodes (Mo and Ag) are bridged by Ag dendrite…