Self-directed channel memristor for high temperature operation

@article{Campbell2017SelfdirectedCM,
  title={Self-directed channel memristor for high temperature operation},
  author={K. Campbell},
  journal={Microelectron. J.},
  year={2017},
  volume={59},
  pages={10-14}
}
  • K. Campbell
  • Published 2017
  • Computer Science, Physics, Materials Science
  • Microelectron. J.
Abstract Ion-conducting memristors comprised of the layered chalcogenide materials Ge 2 Se 3 /SnSe/Ag are described. The memristor, termed a self-directed channel (SDC) device, can be classified as a generic memristor and can tolerate continuous high temperature operation (at least 150 °C). Unlike other chalcogenide-based ion conducting device types, the SDC device does not require complicated fabrication steps, such as photodoping or thermal annealing, making these devices faster and more… Expand
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