Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon.

@article{Gao2009SelfcatalyzedEG,
  title={Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon.},
  author={Li Gao and Robyn L Woo and Baolai Liang and Marta Pozuelo and Sergey V. Prikhodko and Mike Jackson and Niti Goel and Mantu K. Hudait and Diana L. Huffaker and Mark S. Goorsky and Suneel Kodambaka and Robert F. Hicks},
  journal={Nano letters},
  year={2009},
  volume={9 6},
  pages={2223-8}
}
Vertical indium phosphide nanowires have been grown epitaxially on silicon (111) by metalorganic vapor-phase epitaxy. Liquid indium droplets were formed in situ and used to catalyze deposition. For growth at 350 degrees C, about 70% of the wires were vertical, while the remaining ones were distributed in the 3 other <111> directions. The vertical fraction, growth rate, and tapering of the wires increased with temperature and V/III ratio. At 370 degrees C and V/III equal to 200, 100% of the… CONTINUE READING

From This Paper

Figures and tables from this paper.

Citations

Publications citing this paper.
Showing 1-10 of 10 extracted citations

Similar Papers

Loading similar papers…