Self-assembly of nanohills in Si1-xGe(x)/Si hetero-epitaxial structure due to Ge redistribution induced by laser radiation.

@article{Medvid2010SelfassemblyON,
  title={Self-assembly of nanohills in Si1-xGe(x)/Si hetero-epitaxial structure due to Ge redistribution induced by laser radiation.},
  author={Artur Medvid and Pavels Onufrijevs and K. Lyutovich and Michael Oehme and Erich Kasper and N. L. Dmitruk and O. Kondratenko and Igor Dmitruk and Iryna Pundyk},
  journal={Journal of nanoscience and nanotechnology},
  year={2010},
  volume={10 2},
  pages={1094-8}
}
The study is focused on formation and optical properties of nanostructures induced by laser radiation on the surface of Si1-xGe(x)/Si hetero-structures. Formation of self-assembling nanohills induced by irradiation of nanosecond Nd:YAG laser pulses on the Si0.7Ge0.3/Si hetero-epitaxial structures is reported. The atomic force microscope study of the irradiated surface morphology has shown a start of nanohills formation after laser irradiation of the intensity I = 7.0 MW/cm2. The huge "blue… CONTINUE READING