Self-aligned self assembly of multi-nanowire silicon field effect transistors

@inproceedings{Black2005SelfalignedSA,
  title={Self-aligned self assembly of multi-nanowire silicon field effect transistors},
  author={Charles T. Black},
  year={2005}
}
We demonstrate the efficacy of diblock copolymer self assembly for solving key fabrication challenges of aggressively scaled silicon field effect transistors. These materials spontaneously form nanometer-scale patterns that self-align to larger-scale lithography, enabling construction of sub-lithographic semiconducting transistor channels composed of arrays of parallel nanowires with critical dimensions (15 nm width, 40 nm pitch) defined by self assembly. The number of nanowires in the arrays… CONTINUE READING

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