Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation

Abstract

Owing to superior physical properties such as high electron saturation velocity and high electric breakdown field, GaN-based high electron mobility transistors (HEMTs) are capable of delivering superior performance in microwave amplifiers, high power switches, and high temperature integrated circuits (ICs). Compared to the conventional D-mode HEMTs with… (More)

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6 Figures and Tables